Product Summary

The BLF246 is a VHF power MOS transistor. Silicon N-channel enhancement mode vertical D-MOS transistor BLF246 encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads of the BLF246 are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of the handbook for further information.

Parametrics

BLF246 absolute maximum ratings: (1)VDS drain-source voltage:65 V; (2)VGS gate-source voltage:±20 V; (3)ID DC drain current: 13 A; (4)Ptot total power dissipation Tamb ≤ 25 ℃: 130 W; (5)Tstg storage temperature: -65 +150 ℃; (6)Tj junction temperature: 200 ℃.

Features

BLF246 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

BLF246 Simplified outline and symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF246
BLF246
Other

Data Sheet
Negotiable 
BLF246B,112
BLF246B,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 60W VHF P-P
Data Sheet
0-41: $52.15
41-100: $47.85
BLF246,112
BLF246,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR VHF PWR DMOS
Data Sheet
0-25: $71.53